Features: ·TrenchFET® Power MOSFET·100% Rg TestedApplication·Battery Switch for Portable DevicesPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −14 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = ...
Si4473BDY: Features: ·TrenchFET® Power MOSFET·100% Rg TestedApplication·Battery Switch for Portable DevicesPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltag...
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Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | −14 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | −13 | −9.8 | A |
| TA = 70 | −9.9 | −7.8 | |||
| Pulsed Drain Current | IDM | −50 | |||
| continuous Source Current (Diode Conduction)a | IS | −2.3 | −1.34 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.5 | 1.5 | W |
| TA = 70 | 1.6 | 0.94 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||