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SI4482DY

MOSFET 100V 4.6A 2.5W

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SeekIC No. : 00166343 Detail

SI4482DY: MOSFET 100V 4.6A 2.5W

SI4482DY Data Sheet

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Part Number:
SI4482DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 60 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 60 mOhms
Continuous Drain Current : 4.6 A


Pinout

Connection Diagram


Specifications

Parameter
Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 4.6 A
TA = 70 3.7
Pulsed Drain Current IDM 40
continuous Source Current (Diode Conduction)a IS 2.1
Maximum Power Dissipationa TA = 25 PD 2.5 W
TA = 70 1.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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