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SI4484EY

MOSFET 100V 6.9A 3.8W

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SeekIC No. : 00166640 Detail

SI4484EY: MOSFET 100V 6.9A 3.8W

SI4484EY Data Sheet

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Part Number:
SI4484EY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6.9 A
Resistance Drain-Source RDS (on) : 34 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 34 mOhms
Continuous Drain Current : 6.9 A


Pinout

Connection Diagram




Specifications

Parameter Limit Unit
Drain-Source Voltage 60 V
Gate-Source Voltage ±20
Continuous Drain Current (TJ = 175)a TA = 25 4.5 A
TA = 70 3.8
Pulsed Drain Current 30
Maximum Power Dissipationa TA = 25 2.4 W
TA = 70 1.7
Operating Junction and Storage Temperature Range -55 to 175





Description

N-Channel 100-V (D-S) MOSFET Si4484EY




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