SI4488DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 50 mOhms
Continuous Drain Current : 3.5 A


Pinout






Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		VDS	150		V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 150)a	TA = 25	ID	5.0	3.5	A
	TA = 70		4.0	2.8
Pulsed Drain Current		IDM	50
Avalanch Current	L = 0.1 mH	IAS	25
continuous Source Current (Diode Conduction)a		IS	2.8	1.4
Maximum Power Dissipationa	TA = 25	PD	3.1	1.56	W
	TA = 70		2.0	1.0
Operating Junction and Storage Temperature Range		TJ, Tstg	−55 to 150

Description

N-Channel 150-V (D-S) MOSFET Si4488DY