Si4666DY

The Si4666DY is designed as one kind of N-Channel 25-V (D-S) MOSFET device that can be used in wide range of applications such as (1)synchronous buck converter; (2)DC/DC converter. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100 % Rg and UIS Tested; (4)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the Si4666DY can be summarized as:(1)Drain-Source Voltage: 25 V;(2)Gate-Source Voltage: +/-12 V;(3)Continuous Drain Current (TJ = 150 °C): 16.5 to 9.4 A;(4)Pulsed Drain Current: 40 A;(5)Continuous Source-Drain Diode Current: 4.5 to 2.3 A;(6)Single Pulse Avalanche Current: 15 A;(7)Single Pulse Avalanche Energy: 11.25 mJ;(8)Maximum Power Dissipation: 5.0 to 1.6 W;(9)Operating Junction and Storage Temperature Range: -55 to 150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information such as the electrical characteristics about the Si4666DY, please download the datasheet in www.seekic.com or www.chinaicmart.com.