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SI4702DY

MOSFET 30V 5.5A 1.25W

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SeekIC No. : 00165221 Detail

SI4702DY: MOSFET 30V 5.5A 1.25W

SI4702DY Data Sheet

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Part Number:
SI4702DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 5.5 A Resistance Drain-Source RDS (on) : 24 mOhms
Configuration : Dual Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOIC-8 Narrow    

Description

Gate-Source Breakdown Voltage :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Continuous Drain Current : 5.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 24 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Input Voltage VIN 30 V
Q2 Gate-Drive Voltage Referenced to S1 or S2 VHV 20
ON/OFF Voltage VON/OFF 8
Load Current Continuousa IL 5.5 A
Pulsed b ±20
Continuous Intrinsic Diode Conductiona IS -1.15
Maximum Power Dissipationa PD 1.25 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500) ESD 3 kV



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