SI4719CY

On Time (Max) :
Off Time (Max) :
Supply Current (Max) :
Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT
Number of Outputs : 2
Package / Case : SO-16
On Resistance (Max) : 0.028 Ohms
Operating Supply Voltage : 6 V to 30 V


Features:

· Solution for Bi-Directional Blocking
   Bi-Directional Conduction Switch
· 6- to 30-V Operation
· Ground Referenced Logic Level Inputs
· Integrated Low rDS(on) MOSFET
· Level-Shifted Gate Drive with Internal MOSFET
· Two Independent Inputs
· Includes Precision Voltage Circuitry
· Ultra Low Power Consumption in Off State
   (Leakage Current Only)
· Logic Supply Voltage is Not Required


Specifications

Voltage Referenced to GND
VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 32 V
VSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 30 V
VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  0.3 V to 15 V
VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . 20 V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  55 to 150°C
Power Dissipationb (t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 2.4 W
(t = steady state) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .  . 1.5 W
Notes
a. VSD 3 30 VDC
b. Device mounted with all leads soldered to 1" x 1" FR4 with laminated copper PC board.


Description

The Si4719CY is two level-shifted p-channel MOSFETs. Operating together, these MOSFETs can be used as a reverse blocking switch for battery disconnect applications. It is a solution for multiple battery technology designs or designs that require isolation from the power bus during charging. The Si4719CY is available in a 16-pin SOIC package and is rated for the commercial temperature range of 25 to 85C.