Si5433BDC

Features: TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25 ID -6.7 -4.8 A TA = 85 -4.8 -3.5 Pulsed Drain Current(10 s ...

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SeekIC No. : 004490477 Detail

Si5433BDC: Features: TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 Continuous Drain ...

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Part Number:
Si5433BDC
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

TrenchFET® Power MOSFET




Pinout

  Connection Diagram




Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID -6.7 -4.8 A
TA = 85 -4.8 -3.5
Pulsed Drain Current(10 s Pulse Width) IDM -20
Continuous Source Current (Diode Conduction)a IS -2.1 -1.1
Maximum Power Dissipationa TA = 25 PD 2.5 1.3 W
TA = 85 1.3 0.7
Soldering Recommendations (Peak Temperature)b, c 260
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

P-Channel 20-V (D-S) MOSFET Si5433BDC




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