Features: · TrenchFET® Power MOSFET· 2.5-V RatedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID -5.3 -3.9 A TA = 85 -3.8 -2.8 Pulsed Dra...
Si5441DC: Features: · TrenchFET® Power MOSFET· 2.5-V RatedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 C...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -20 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -5.3 | -3.9 | A |
| TA = 85 | -3.8 | -2.8 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | -20 | |||
| Continuous Source Current (Diode Conduction)a | IS | -2.1 | -1.1 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.5 | 1.3 | W |
| TA = 85 | 1.3 | 0.7 | |||
| Soldering Recommendations (Peak Temperature)b, c | 260 | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||