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Si5465EDC

PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID -7.0 -5.0 A TA = 85 -5.0 -3.6 Pulsed Drain Current(10 s Pulse Width) IDM -20 Continuo...

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Si5465EDC: PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID ...

Si5465EDC Data Sheet

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Part Number:
Si5465EDC
Supply Ability:
5000

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Product Details

Description



Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID -7.0 -5.0 A
TA = 85 -5.0 -3.6
Pulsed Drain Current(10 s Pulse Width) IDM -20
Continuous Source Current (Diode Conduction)a IS -2.1 -1.1
Maximum Power Dissipationa TA = 25 PD 2.5 1.3 W
TA = 85 1.3 0.7
Soldering Recommendations (Peak Temperature)b, c   260
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150

Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. When using HBM. The MM rating is 300 V.
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.




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