Si5468DC

The Si5468DC is designed as one kind of N-Channel 30-V (D-S) MOSFET device that has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)Compliant to RoHS Directive 2002/95/EC. Also this device can be used in wide range of applications such as (1)System Power: Notebook and Netbook; (2)Load Switch; (3)Low Current DC/DC.

The absolute maximum ratings of the Si5468DC can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current (TJ = 150 °C): 6.0 A;(4)Pulsed Drain Current: 30 A;(5)Continuous Source-Drain Diode Current: 4.8 to 1.9 A;(6)Maximum Power Dissipation: 5.7 W or 1.5 W;(7)Operating Junction and Storage Temperature Range: -55 to 150 °C;(8)Soldering Recommendations (Peak Temperature): 260 °C.

The electrical characteristics of the Si5468DC can be summarized as:(1)Drain-Source Breakdown Voltage: 30 V;(2)VDS Temperature Coefficient: 35 mV/°C;(3)VGS(th) Temperature Coefficient: -4.5 mV/°C;(4)Gate-Source Threshold Voltage: 1.0 to 2.5 V;(5)Gate-Source Leakage: +/-100 nA;(6)Zero Gate Voltage Drain Current: 1 or 5 uA;(7)On-State Drain Current: 20 A;(8)Forward Transconductance: 17 S. If you want to know more information about the Si5468DC, please download the datasheet in www.seekic.com or www.chinaicmart.com .