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Si5473DC

Features: · TrenchFET®Power MOSFETS· Low rDS(on) and Excellent Power Handling In Compact FootprintApplicationBattery and Load Switch for Portable DevicesPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±...

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SeekIC No. : 004490494 Detail

Si5473DC: Features: · TrenchFET®Power MOSFETS· Low rDS(on) and Excellent Power Handling In Compact FootprintApplicationBattery and Load Switch for Portable DevicesPinoutSpecifications Parameter Sy...

Si5473DC Data Sheet

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Part Number:
Si5473DC
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET®Power MOSFETS
· Low rDS(on) and Excellent Power Handling In Compact Footprint


Application

Battery and Load Switch for Portable Devices


Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID -8.1 -5.9 A
TA = 85 -5.9 -4.3
Pulsed Drain Current(10 s Pulse Width) IDM ±20
Continuous Source Current (Diode Conduction)a IS -2.1 -1.1
Maximum Power Dissipationa TA = 25 PD 2.5 1.3 W
TA = 85 1.3 0.7
Soldering Recommendations (Peak Temperature)b, c   260
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150

Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.




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