Si5486DU

The Si5486DU is designed as one kind of dual N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)load switch, PA switch, and for portable applications; (2)point-of-load. And this device has some points of features:(1)Halogen-free; (2)TrenchFET-Power MOSFET; (3)New Thermally Enhanced PowerPAK-ChipFET package: small footprint area and low on-resistance and thin 0.8 mm profile.

The absolute maximum ratings of the Si5486DU can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 8 V;(3)Pulsed Drain Current: 40 A;(4)Maximum Power Dissipation: 2.0 to 31 W;(5)Continuous Drain Current (TJ = 150 °C): 11.6 to 12 A;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the Si5486DU can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 21 mV/°C;(3)VGS(th) Temperature Coefficient: -3.4 mV/°C;(4)Gate-Source Threshold Voltage: 0.4 to 1.0 V;(5)Gate-Source Leakage: ±100 nA;(6)On-State Drain Current: 40 A;(7)Forward Transconductance: 46 S. If you want to know more information about the SI5486DU, please download the datasheet in www.seekic.com or www.chinaicmart.com .