Si5908DC

The Si5908DC is designed as one kind of dual N-channel 20V (D-S) MOSFETs with typical applications of load switch and PA switch and battery switch.

It has four features. (1)Halogen-free ccording to IEC 61249-2-21 definition. (2)TrenchFET power MOSFETs. (3)Ultra low RDS(on) and excellent power handling in compact footprint. (4)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings Si5908DC have been concluded into several points as follow. (1)Its drain to source voltage would be 20V. (2)Its gate to source voltage would be +/-8V. (3)Its continuous drain current (Tj=150°C) would be 5s 5.9A and steady state 4.4A at Ta=25°C and would be 5s 4.2A and steady state 3.1A at Ta=85°C. (4)Its pulsed drain current would be 20A. (5)Its continuous source current (diode conduction) woould be 5s 1.8A and steady state 0.9A. (6)Its maximum power dissipation would be 5s 2.1W and steady state 1.1W at Ta=25°C and would be 5s 1.1W and steady state 0.6W at Ta=85°C. (7)Its operating junction and storage temperature range would be from -55°C to 150°C. (8)Its soldering recommendations (peak temperature) Si5908DC would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics Si5908DC are concluded as follow. (1)Its gate threshold voltage would be min 0.4V and max 1.0V. (2)Its gate to body leakage would be max +/-100nA. (3)Its zero gate voltage drain current would be max 1A at Vds=20V and Vgs=0V and would be max 5A at Vds=20V and Vgs=0V and Tj=85°C. (4)Its on-state drain current would be min 20A. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!