Si5920DC

The Si5920DC is designed as one kind of dual N-channel 1.5V (G-S) MOSFETs with typical applications of load switch for portable applications with guaranteed operation at Vgs=1.5V critical for optimized design and space savings.

It has four features. (1)Halogen-free according to IEC 61249-2-21 definition. (2)TrenchFET power MOSFET: 1.5 V rated. (3)Ultra low on-resistance in compact, thermally enhanced chipFET package. (4)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings Si5920DC have been concluded into several points as follow. (1)Its drain to source voltage would be 8V. (2)Its gate to souece voltage would be +/-5V. (3)Its contimuous drain current (Tj=150°C) would be 4A. (4)Its pulsed drain current would be 25A. (5)Its continuous source to drain diode current would be 2.6A at Tc=25°C and would be 1.7A at Ta=25°C. (6)Its maximum power dissipation would be 3.12W at Tc=25°C and would be 2.0W at Tc=70°C and would be 2.04W at Ta=25°C and would be 1.3W at Ta=70°C. (7)Its operating junction and storage temperature range would be from -55°C to 150°C. (8)Its soldering recommendations (peak temperature) would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics Si5920DC are concluded as follow. (1)Its drain to source breakdown voltage would be min 8V. (2)Its Vds temperature coefficient would be typ 8.2mV/°C. (3)Its Vgs(th) temperature coefficient would be typ -2.6mV/°C. (4)Its gate to source threshold voltage would be min 0.3V and max 1V. (5)Its gate to source leakage would be max +/-100ns. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please visit our website and contact us for details. Thank you!