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Si5935DC

Features: · TrenchFET® Power MOSFETS· Low rDS(on) Dual and Excellent Power Handling In A Compact FootprintApplication· Load Switch· PA Switch· Battery SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VG...

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SeekIC No. : 004490535 Detail

Si5935DC: Features: · TrenchFET® Power MOSFETS· Low rDS(on) Dual and Excellent Power Handling In A Compact FootprintApplication· Load Switch· PA Switch· Battery SwitchPinoutSpecifications Parameter...

Si5935DC Data Sheet

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Part Number:
Si5935DC
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS
· Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint


Application

· Load Switch
· PA Switch
· Battery Switch


Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID -4.1 -3 A
TA = 85 -2.9 -2.2
Pulsed Drain Current(10 s Pulse Width) IDM -15
Continuous Source Current (Diode Conduction)a IS -1.8 -0.9
Maximum Power Dissipationa TA = 25 PD 2.1 1.1 W
TA = 85 1.1 0.6
Soldering Recommendations (Peak Temperature)b, c   260
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150

Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.




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