Si6433BDQ Selling Leads, Price trend, Si6433BDQ DataSheet download, circuit diagram from SeekIC.com

Features: · P-Channel Vertical DMOS· Macro Model (Subcircuit Model)· Level 3 MOS· Apply for both Linear and Switching Application· Accurate over the -55 to 125°C Temperature Range· Model the Gate Charge, Transient, and Diode Reverse Recovery CharacteristicsDescriptionThe attached spice model Si643...

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SeekIC No. : 004490558 Detail

Si6433BDQ: Features: · P-Channel Vertical DMOS· Macro Model (Subcircuit Model)· Level 3 MOS· Apply for both Linear and Switching Application· Accurate over the -55 to 125°C Temperature Range· Model the Gate Ch...

Si6433BDQ Data Sheet

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Part Number:: Si6433BDQ
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/12/25

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Product Details

Description

Features:

· P-Channel Vertical DMOS
· Macro Model (Subcircuit Model)
· Level 3 MOS
· Apply for both Linear and Switching Application
· Accurate over the -55 to 125°C Temperature Range
· Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

Description

The attached spice model Si6433BDQ describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network Si6433BDQ is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

P-Channel 2.5-V (G-S) MOSFET

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Si6433BDQ

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