SI6435DQ

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : - 4.5 A
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source
Resistance Drain-Source RDS (on) : 27 m Ohms


Features:

• 4.5 A, 30 V R_DS(ON) = 40 m @ V_GS = 10 V
                          R_DS(ON) = 70 m @ V_GS = 4.5 V
• Extended V_GSS range (±20V) for battery applications
• High performance trench technology for extremely
   low R_DS(ON)
• Low profile TSSOP-8 package


Application

• Battery protection
• DC/DC conversion
• Power management
• Load switch


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		-30	V
VGSS	Gate-Source Voltage		±20	V
ID	Drain Current Continuous	(Note 1a)	-4.5	A
	Pulsed		-30
PD	Power Dissipation	(Note 1a)	1.3	W
		(Note 1b)	0.6
TJ, TSTG	Operating and Storage Junction Temperature Range		-55 to +150	°C

Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process Si6435DQ. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V 20V).