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Si6459BDQ

Features: TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID -2.7 -2.2 A TA = 70 -2.2 -1.8 Pulsed Drain Current(10 ...

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SeekIC No. : 004490565 Detail

Si6459BDQ: Features: TrenchFET® Power MOSFETPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 Continuous Drai...

Si6459BDQ Data Sheet

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Part Number:
Si6459BDQ
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TrenchFET® Power MOSFET




Pinout

Connection Diagram




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID -2.7 -2.2 A
TA = 70 -2.2 -1.8
Pulsed Drain Current(10 s Pulse Width) IDM -20
Continuous Source Current (Diode Conduction)a IS -1.25 -0.83
Avalanche Current L = 0.1 mH IS 15 15 A
Single Pulse Avalanche Energy L = 0.1 mH IAS 11 11 mJ
Maximum Power Dissipationa TA = 25 PD 1.50 1.0 W
TA = 70 1.0 0.67
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

P-Channel 60-V (D-S) MOSFET Si6459BDQ




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