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Si6463BDQ

PinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25 ID -7.4 -6.2 A TA = 70 -5.9 4.9 Pulsed Drain Current(10 s Pulse Width) IDM -30 Continuous ...

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Si6463BDQ: PinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25 ID -7...

Si6463BDQ Data Sheet

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Part Number:
Si6463BDQ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



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Connection Diagram




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID -7.4 -6.2 A
TA = 70 -5.9 4.9
Pulsed Drain Current(10 s Pulse Width) IDM -30
Continuous Source Current (Diode Conduction)a IS -1.35 -0.95
Maximum Power Dissipationa TA = 25 PD 1.5 1.05 W
TA = 70 1.0 0.67
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

P-Channel 1.8-V (G-S) MOSFET Si6463BDQ




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