SI6463DQ

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : - 8.8 A
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source
Resistance Drain-Source RDS (on) : 10 m Ohms


Features:

• 8.8 A, 20 V. R_DS(ON) = 0.0125 @ V_GS = 4.5 V
                           R_DS(ON) = 0.018 @ V_GS = 2.5 V
• Extended V_GSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)
• Low profile TSSOP-8 package


Application

• Load switch
• Motor drive
• DC/DC conversion
• Power management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Load Current Continuous       (Note 1a)                        - Pulsed	-8.8	A
		-50
PD	Power Dissipation (Note 1a)                              (Note 1b)	1.3	W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)                                                                  (Note 1b)	96	°C/W
		208

Description

This P-Channel 2.5V specified MOSFET Si6463DQ is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).