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Si6467BDQ

PinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25 ID -8.0 -6.8 A TA = 70 -6.5 -5.4 Pulsed Drain Current(10 s Pulse Width) IDM -30 Continuous...

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SeekIC No. : 004490569 Detail

Si6467BDQ: PinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25 ID -8...

Si6467BDQ Data Sheet

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Part Number:
Si6467BDQ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



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Connection Diagram




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID -8.0 -6.8 A
TA = 70 -6.5 -5.4
Pulsed Drain Current(10 s Pulse Width) IDM -30
Continuous Source Current (Diode Conduction)a IS -1.35 -0.95
Maximum Power Dissipationa TA = 25 PD 1.5 1.05 W
TA = 70 1.0 0.67
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

P-Channel 1.8-V (G-S) MOSFET Si6467BDQ




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