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Si6544BDQ

Features: · TrenchFET® Power MOSFETSPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 sec Steady State 10 sec Steady State Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 4.3 3.7 -3....

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SeekIC No. : 004490574 Detail

Si6544BDQ: Features: · TrenchFET® Power MOSFETSPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 sec Steady State 10 sec Steady State Drain-Source Voltage VDS 30 30 V ...

Si6544BDQ Data Sheet

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Part Number:
Si6544BDQ
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
10 sec Steady State 10 sec Steady State
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 4.3 3.7 -3.8 -3.8 A
TA = 70 3.5 3.0 -3.0 -2.6
Pulsed Drain Current IDM 20 -20
Continuous Source Current (Diode Conduction)a IS 1.0 0.7 -1.0 -0.7
Maximum Power Dissipationa TA = 25 PD 1.14 0.83 1.14 0.83 W
TA = 70 0.73 0.53 0.73 0.53
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W





Description

N- and P-Channel 30-V (D-S) MOSFET Si6544BDQ




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