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Si6552DQ

PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS -20 -12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150°C)a TA = 25°C ID -2.8 -2.5 A TA = 70°C -2.3 -2.0 Pulsed Drain Current IDM ±20 Continuous Source ...

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Si6552DQ: PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS -20 -12 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150°C)a TA = 25°C...

Si6552DQ Data Sheet

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Part Number:
Si6552DQ
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



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Connection Diagram


Specifications

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS -20 -12 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID -2.8 -2.5 A
TA = 70°C -2.3 -2.0
Pulsed Drain Current IDM ±20
Continuous Source Current (Diode Conduction)a IS 1.0 -1.0
Maximum Power Dissipationa TA = 25°C PD 1.0 1.0 W
TA = 70°C 0.64 0.64
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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