PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage(MOSFET ) VDS -20 V Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage(MOSFET) VGS ±12 Continuous Drain Current (TJ = 150) (MOSFET)a,b TA = 25 ID ±1.7 A TA = 70 ±1.3 Pulsed Drain Current(M...
Si6821DQ: PinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage(MOSFET ) VDS -20 V Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage(MOSFET) VGS ±12 Continuous D...
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| Parameter | Symbol | Limit | Unit | ||
| Drain-Source Voltage(MOSFET ) | VDS | -20 | V | ||
| Reverse Voltage (Schottky) | VKA | 20 | |||
| Gate-Source Voltage(MOSFET) | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150) (MOSFET)a,b | TA = 25 | ID | ±1.7 | A | |
| TA = 70 | ±1.3 | ||||
| Pulsed Drain Current(MOSFET) | IDM | ±8 | |||
| Continuous Source Current (MOSFET Diode Conduction)a,b | IS | -1.0 | |||
| Average Foward Current (Schottky) | IF | 1.5 | |||
| Pulsed Foward Current (Schottky) | IFM | 30 | |||
| Maximum Power Dissipation (MOSFET)a,b | TA = 25 | PD | 1.2 | W | |
| TA = 70 | 0.76 | ||||
| Maximum Power Dissipation (Schottky)a,b | TA = 25 | 1.0 | |||
| TA = 70 | 0.64 | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||