SI6923DQ

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.045 Ohms
Package / Case : TSSOP-8
Continuous Drain Current : - 3.5 A


Features:

• 3.5 A, 20 V. R_DS(ON) = 0.045 @ V_GS = 4.5 V
                           R_DS(ON) = 0.075 @ V_GS = 2.5 V
• VF < 0.55 V @ 1 A
• High performance trench technology for extremely low R_DS(ON)
• Low profile TSSOP-8 package


Application

• DC/DC conversion


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Load Current Continuous (Note 1)                       - Pulsed	-3.5	A
		-30
PD	MOSFET Power Dissipation (minimum pad) (Note 1) Schottky Power Dissipation (minimum pad) (Note 1)	1.2	W
		1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. The Si6923DQ is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications.