Features: · Low rDS(on)· VGS Max Rating: 14 V· Exceeds 2-kV ESD Protection· Low Profile TSSOP-8 Package· rDS(on) Rating at 2.5-V VGS· 28-V VDS Rated· Symetrical Voltage Blocking (Off Voltage)PinoutSpecifications Parameter Symbol N-Channel Unit Drain-Source Voltage VDS - to + V Gat...
Si6924EDQ: Features: · Low rDS(on)· VGS Max Rating: 14 V· Exceeds 2-kV ESD Protection· Low Profile TSSOP-8 Package· rDS(on) Rating at 2.5-V VGS· 28-V VDS Rated· Symetrical Voltage Blocking (Off Voltage)PinoutS...
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| Parameter | Symbol | N-Channel | Unit | |
| Drain-Source Voltage | VDS | - to + | V | |
| Gate-Source Voltage | VGS | ±14 | ||
| Continuous Drain Current (TJ = 150)a, b | TA = 25 | ID | ±4.6 | A |
| TA = 70 | ±3.7 | |||
| Pulsed Drain Current | IDM | ±20 | ||
| Continuous Source Current (Diode Conduction)a, b | IS | 1.25 | ||
| Maximum Power Dissipationa, b | TA = 25 | PD | 1.1 | W |
| TA = 70 | 0.72 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | |
The Si6924EDQ is a dual n-channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated into the MOSFET. The device is designed for use in Lithium Ion battery pack circuits. The common-drain contsruction takes advantage of the typical battery pack topology, allowing a further reduction of the device's on-resistance. The 2-stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD energy and over-voltages above the gates inherent safe operating range. The series resistor used to limit the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to 10 mA @ 14 V and the maximum toff to 12 s. The Si6924EDQ has been optimized as a battery or load switch in Lithium Ion applications with the advantage of both a 2.5-V rDS(on) rating and a safe 14-V gate-to-source maximum rating.