SI6943DQ

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Package / Case : TSSOP-8
Continuous Drain Current : - 2.5 A
Configuration : Dual Dual Source
Resistance Drain-Source RDS (on) : 89 m Ohms


Features:

• 2.5 A, 12 V, R_DS(ON) = 110 m @ V_GS = 4.5 V.
                          R_DS(ON) = 180 m @ V_GS = 2.5V.
• Extended VG_SS range (±8V) for battery applications
• Low gate charge (4.6nC typical)
• High performance trench technology for extremely
low R_DS(ON)
• Low profile TSSOP-8 package


Application

• Load switch
• Motor drive
• DC/DC conversion
• Power management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		-12	V
VGSS	Gate-Source Voltage		±8	V
ID	Drain Current Continuous	(Note 1a)	-2.5	A
	Pulsed		-20
PD	Power Dissipation	(Note 1a)	1.0	W
		(Note 1b)	0.6
TJ, TSTG	Operating and Storage Junction Temperature Range		-55 to +150	°C

Description

This P-Channel 2.5V specified MOSFET Si6943DQ is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V to 8V).