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PinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID -3.9 -3.4 A TA = 70 -3.1 -2.7 Pulsed Drain Current IDM -30 Continuous Source Current (...

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SeekIC No. : 004490598 Detail

Si6963BDQ: PinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID -...

Si6963BDQ Data Sheet

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Part Number:: Si6963BDQ
Supply Ability:: 5000

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Upload time: 2025/12/25

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Connection Diagram

Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		V_DS	-20		V
Gate-Source Voltage		V_GS	±12
Continuous Drain Current (TJ = 150)^a	T_A= 25	I_D	-3.9	-3.4	A
	T_A = 70		-3.1	-2.7
Pulsed Drain Current		I_DM	-30
Continuous Source Current (Diode Conduction)^a		I_S	-1.0	-0.75
Maximum Power Dissipation^a	T_A = 25	P_D	1.13	0.83	W
	T_A= 70		0.73	0.53
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150		/W

Description

Dual P-Channel 2.5-V (G-S) MOSFET Si6963BDQ

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Si6963BDQ

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