SI6963DQ

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.036 Ohms
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : - 3.8 A
Package / Case : TSSOP-8
Configuration : Dual Dual Source


Features:

• 3.8 A, 20 V, R_DS(ON) = 0.043 @ V_GS = 4.5 V
                           R_DS(ON) = 0.070 @ V_GS = 2.5 V
• Extended V_GSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low R_DS(ON)
• Low profile TSSOP-8 package


Application

• Load switch
• Motor drive
• DC/DC conversion
• Power management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		-20	V
VGSS	Gate-Source Voltage		±12	V
ID	Drain Current Continuous	(Note 1a)	-3.8	A
	Pulsed		-30
PD	Power Dissipation	(Note 1a)	1.0	W
		(Note 1b)	0.6
TJ, TSTG	Operating and Storage Junction Temperature Range		-55 to +150	°C

Description

This P-Channel 2.5V specified MOSFET Si6963DQ is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).