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Si6968BEDQ

Features: · TrenchFET® Power MOSFET· ESD Protected: 3000 VPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID 6.5 5.2 A TA = 70 5.5 3.5 Puls...

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SeekIC No. : 004490603 Detail

Si6968BEDQ: Features: · TrenchFET® Power MOSFET· ESD Protected: 3000 VPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS...

Si6968BEDQ Data Sheet

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Part Number:
Si6968BEDQ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· ESD Protected: 3000 V




Pinout

Connection Diagram




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 6.5 5.2 A
TA = 70 5.5 3.5
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 1.5 1.0
Maximum Power Dissipationa TA = 25 PD 1.5 1.0 W
TA = 70 0.96 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W





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