Si7116DN Selling Leads, Price trend, Si7116DN DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchFET® Power MOSFET· New Low Thermal ResistancePowerPAK® Package with Low1.07-mm Profile· PWM Optimized·100% Rg TestedApplication· Synchronous Rectification· Intermediate Switch· Synchronous BuckSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Sou...

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SeekIC No. : 004490619 Detail

Si7116DN: Features: · TrenchFET® Power MOSFET· New Low Thermal ResistancePowerPAK® Package with Low1.07-mm Profile· PWM Optimized·100% Rg TestedApplication· Synchronous Rectification· Intermediate Swi...

Si7116DN Data Sheet

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Part Number:: Si7116DN
Supply Ability:: 5000

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1~5000

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Processing time
15 Days

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Upload time: 2024/4/27

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Recent History
What is this?

SI7100DN-T1-E3 evaluate
US $.46 - .5 / Piece

MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V
SI7100DN-T1-GE3 evaluate
US $.53 - .64 / Piece

MOSFET 8.0V 35A 52W 3.5mohm @ 4.5V
SI7102DN evaluate
DescriptionN-Channel 12-V (D-S) MOSFET The SI7102DN is designed as one kind of dual N-channel 12-...

Product Details

Description

Features:

· TrenchFET^® Power MOSFET
· New Low Thermal Resistance
PowerPAK^®Package with Low
1.07-mm Profile
· PWM Optimized
·100% R_gTested

Application

· Synchronous Rectification
· Intermediate Switch
· Synchronous Buck

Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		V_DS	40		V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J = 150)^a	T_A= 25	I_D	16.4	10.5	A
	T_A = 70		13.1	8.4
Pulsed Drain Current		I_DM	60
Continuous Source Current (Diode Conduction)_a		I_S	3.2	1.3
Single Avalanche Current	L = 0.1 mH	I_AS	15
Single Avalanche Energy		E_AS	11		mJ
Maximum Power Dissipation_a	T_A= 25	P_D	3.8	1.5	W
	T_A= 70		2.0	0.8
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150		/W

Description

N-Channel 40-V (D-S) Fast Switching MOSFET Si7116DN

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Si7116DN

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