Features: · Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology· Qg Optimized· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· 100% Rg TestedApplication· Low-Side DC/DC Conversion − Notebook − Server − Workstation· S...
Si7336ADP: Features: · Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology· Qg Optimized· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· 100% Rg...
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· Low-Side DC/DC Conversion
− Notebook
− Server
− Workstation
· Synchronous Rectifier, POL
| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 30 | 18 | A |
| TA = 70 | 25 | 15 | |||
| Pulsed Drain Current | IDM | 70 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.5 | 1.8 | ||
| Avalanche Current | L = 1.0 mH | IAS | 50 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5.4 | 1.9 | W |
| TA = 70 | 3.4 | 1.2 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||