Si7336ADP

Features: · Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology· Qg Optimized· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· 100% Rg TestedApplication· Low-Side DC/DC Conversion − Notebook − Server − Workstation· S...

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SeekIC No. : 004490662 Detail

Si7336ADP: Features: · Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology· Qg Optimized· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· 100% Rg...

floor Price/Ceiling Price

Part Number:
Si7336ADP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/12/25

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Product Details

Description



Features:

· Ultra-Low On-Resistance Using High Density
    TrenchFET® Gen II Power MOSFET Technology
· Qg Optimized
· New Low Thermal Resistance PowerPAK® Package
    with Low 1.07-mm Profile
· 100% Rg Tested



Application

· Low-Side DC/DC Conversion
    − Notebook
    − Server
   
− Workstation
· Synchronous Rectifier, POL




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 30 18 A
TA = 70 25 15
Pulsed Drain Current IDM 70
Continuous Source Current (Diode Conduction)a IS 4.5 1.8
Avalanche Current L = 1.0 mH IAS 50
Maximum Power Dissipationa TA = 25 PD 5.4 1.9 W
TA = 70 3.4 1.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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