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Features: · TrenchFET® Power MOSFET· Qg OptimizedApplication· Synchronous Rectifier for DC/DCSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 20 13 A ...

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SeekIC No. : 004490669 Detail

Si7366DP: Features: · TrenchFET® Power MOSFET· Qg OptimizedApplication· Synchronous Rectifier for DC/DCSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 ...

Si7366DP Data Sheet

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Part Number:: Si7366DP
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/25

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Product Details

Description

Features:

· TrenchFET^® Power MOSFET
· Q_gOptimized

Application

· Synchronous Rectifier for DC/DC

Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		V_DS	-20		V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J = 150)^a	T_A= 25	I_D	20	13	A
	T_A = 70		17	10
Pulsed Drain Current		I_DM	50
Continuous Source Current (Diode Conduction)^a		I_S	4.1	1.4
Maximum Power Dissipation^a	T_A = 25	P_D	5	1.7	W
	T_A= 70		3.2	1.1
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150		/W

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Si7366DP

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