Features: · TrenchFET® Power MOSFET· Low rDS x Qg Figure of Merit· Optimized For High Frequency ConversionApplication· Low-Side MOSFET in Synchronous BuckDC/DC Converters in Desktops· Low Output Voltage Synchronous RectifierSpecifications Parameter Symbol 10 secs Steady State Unit ...
Si7368DP: Features: · TrenchFET® Power MOSFET· Low rDS x Qg Figure of Merit· Optimized For High Frequency ConversionApplication· Low-Side MOSFET in Synchronous BuckDC/DC Converters in Desktops· Low Output...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | ±16 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 20 | 13 | A |
| TA = 70 | 17 | 10 | |||
| Pulsed Drain Current | IDM | 50 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.1 | 1.4 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5 | 1.7 | W |
| TA = 70 | 3.2 | 1.1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||