Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· PWM Optimized for Fast Switching· 100% Rg TestedApplication· Primary Side Switch for 24-V DC/DC Applications· Secondary Synchronous RectifierSpecifications Parameter Symbol 10...
Si7370DP: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· PWM Optimized for Fast Switching· 100% Rg TestedApplication· Primary Side Switch f...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 60 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 15.8 | 9.6 | A |
| TA = 70 | 12.6 | 7.7 | |||
| Continuous Source Current | IS | 4.7 | 1.7 | ||
| Pulsed Drain Current | IDM | 50 | |||
| Avalanche Current | IAS | 50 | |||
| Single Avalanche Energy | EAS | 125 | |||
| Maximum Power Dissipationa | TA = 25 | PD | 5.2 | 1.9 | W |
| TA = 70 | 3.3 | 1.25 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||