Features: • Extremely Low Qgd WFET Technology for Low Switching Losses• TrenchFET® Power MOSFET• New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile• 100 % Rg TestedApplication• High-Side DC/DC Conversion - Notebook - Server - WorkstationR...
Si7390DP: Features: • Extremely Low Qgd WFET Technology for Low Switching Losses• TrenchFET® Power MOSFET• New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile•...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 15 | 9 | A |
| TA = 70 | 12 | 7 | |||
| Pulsed Drain Current | IDM | ±50 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.1 | 1.5 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5 | 1.8 | W |
| TA = 70 | 3.2 | 1.1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||
| Soldering Recommendations (Peak Temperature)b,c | 260 | ||||