Features: · TrenchFET® Power MOSFETS· Ultra-Low On-Resistance Critical for Application· Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· 100% Rg and Avalanche TestedApplication· Active Clamp in Intermediate DC/DC PowerSuppliesSpecifications Parameter Symbol 10 secs ...
Si7439DP: Features: · TrenchFET® Power MOSFETS· Ultra-Low On-Resistance Critical for Application· Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· 100% Rg and Avalanche TestedApplicat...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -150 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -5.2 | -3.0 | A |
| TA = 70 | -4.1 | -2.4 | |||
| Pulsed Drain Current | IDM | -50 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.2 | -1.6 | ||
| Single Avalanche Current | L = 0.1 mH | IAS | -40 | ||
| Single Avalanche Energy | EAS | 80 | mJ | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5.4 | 1.9 | W |
| TA = 70 | 3.4 | 1.2 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||