Features: ·TrenchFET® Power MOSFETS· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· PWM Optimized for Fast SwitchingApplication· Primary Side Switch for High Density DC/DC·Telecom/Server 48-V, Full-/Half-Bridge DC/DC· Industrial and 42-V AutomotiveSpecifications ...
Si7454DP: Features: ·TrenchFET® Power MOSFETS· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· PWM Optimized for Fast SwitchingApplication· Primary Side Switch for High Density D...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 100 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 7.8 | 5.0 | A |
| TA = 70 | 5.7 | 3.6 | |||
| Pulsed Drain Current | IDM | 30 | |||
| Single Avalanche Current | L = 0.1 mH | IAS | 25 | ||
| Single Avalanche Energy (Duty Cycle1%) | EAS | 31 | mJ | ||
| Continuous Source Current (Diode Conduction)a | IS | 4.0 | 1.6 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 4.8 | 1.9 | W |
| TA = 70 | 2.6 | 1.0 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||