Si7464DP Selling Leads, Price trend, Si7464DP DataSheet download, circuit diagram from SeekIC.com

Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C Temperature Range• Model the Gate Charge, Transient, and Diode Reverse RecoveryCharacteristics...

See larger image

SeekIC No. : 004490711 Detail

Si7464DP: Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C ...

Si7464DP Data Sheet

Get Latest Price

Part Number:: Si7464DP
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2025/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

SI7401DN-T1 evaluate
MOSFET 20V 11A 3.8W
SI7401DN-T1-E3 evaluate
MOSFET 20V 11A 3.8W
SI7402DN-T1-E3 evaluate
US $.59 - .85 / Piece

MOSFET 12V 20A 3.8W 5.7mohm @ 4.5V

Product Details

Description

Features:

• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics

Description

The attached spice model of Si7464DP describes the typical electricalcharacteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values of Si7464DP are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

Customers Who Bought This Item Also Bought

SI7414DN-T1
US $$0.30 - 0.50 / Piece

Supply Ability:10000Day

View details
SI7447DP
US $$0.50 - 1.00 / Piece

Supply Ability:10000Week

View details
SI7447DP-T1-E3
US $$0.20 - 0.50 / Piece

Supply Ability:10000Week

View details
SI7450DP
US $$0.65 - 1.00 / Piece

Supply Ability:2Day

View details
SI7454DP-T1-E3
US $$0.30 - 0.50 / Piece

Supply Ability:10000Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

Si7464DP

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Integrated Circuits (ICs)(111140)

Power Supplies - External/Internal (Off-Board)(631)

Relays(6300)

Discrete Semiconductor Products(7459)

Semiconductor Modules(17785)

Filters(263)