Features: • Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology• Qg Optimized• New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile• 100 % Rg TestedApplication• Low-Side DC/DC Conversion Notebook Server Worksta...
Si7636DP: Features: • Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology• Qg Optimized• New Low Thermal Resistance PowerPAK® Package with Low 1.07-m...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150°C)a | TA = 25°C | ID | 28 | 17 | A |
| TA = 70°C | 22 | 13 | |||
| Pulsed Drain Current | IDM | 60 | |||
| Continuous Source Current (Diode Conduction)a | IS | 5.2 | 1.9 | ||
| Maximum Power Dissipationa | TA = 25°C | PD | 3.3 | 1.2 | W |
| TA = 70°C | 3.3 | 1.2 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C | ||