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Si7705DN

Features: ·TrenchFET® Power MOSFETS: 1.8-V Rated· Ultra-Low Thermal Resistance, PowerPAK™ Package with Low 1.07-mm ProfileApplication· Charger SwitchingSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage (MOSFET and Schottky) VDS -20 V Reverse...

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SeekIC No. : 004490742 Detail

Si7705DN: Features: ·TrenchFET® Power MOSFETS: 1.8-V Rated· Ultra-Low Thermal Resistance, PowerPAK™ Package with Low 1.07-mm ProfileApplication· Charger SwitchingSpecifications Parameter Symbo...

Si7705DN Data Sheet

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Part Number:
Si7705DN
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·TrenchFET® Power MOSFETS: 1.8-V Rated
· Ultra-Low Thermal Resistance, PowerPAK™
    Package with Low 1.07-mm Profile


Application

· Charger Switching


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage (MOSFET and Schottky) VDS -20 V
Reverse Voltage (Schottky) VKA 20
Gate-Source Voltage (MOSFET) VGS ±8
Continuous Drain Current (TJ = 150)(MOSFET)a TA = 25 ID -6.3 -4.3 A
TA = 80 -4.5 -3.1
Pulsed Drain Current (MOSFET) IDM -20
Continuous Source Current (Diode Conduction)a IS -2.3 -1.1
Average Foward Current (Schottky) IF 1.0
Pulsed Foward Current (Schottky) IFM 7
Maximum Power Dissipation(MOSFET)a TA = 25 PD 2.8 1.3 W
TA = 80 1.5 0.7
Maximum Power Dissipation (Schottky)a TA = 25 2.0 1.1
TA = 80 1.0 0.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W



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