DescriptionN-Channel 30-V (D-S) MOSFET with Schottky Diode The Si7748DP is designed as one kind of N-Channel 30 V (D-S) MOSFET with Schottky Diode device that can be used in wide range of applications such as (1)VRM, POL, Server; (2)High Current DC/DC - Low-Side. And this device has some points o...
Si7748DP: DescriptionN-Channel 30-V (D-S) MOSFET with Schottky Diode The Si7748DP is designed as one kind of N-Channel 30 V (D-S) MOSFET with Schottky Diode device that can be used in wide range of applicati...
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The Si7748DP is designed as one kind of N-Channel 30 V (D-S) MOSFET with Schottky Diode device that can be used in wide range of applications such as (1)VRM, POL, Server; (2)High Current DC/DC - Low-Side. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21 Definition; (2)SkyFET Monolithic TrenchFET?Power MOSFET and Schottky Diode; (3)100 % Rg Tested; (4)100 % UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.
The absolute maximum ratings of the Si7748DP can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 50 to 18.6 A;(4)Pulsed Drain Current: 80 A;(5)Continuous Source-Drain Diode Current: 50 to 4.3 A;(6)Single Pulse Avalanche Current: 30 A;(7)Single Pulse Avalanche Energy: 45 mJ;(8)Maximum Power Dissipation: 56 to 3.0 W;(9)Operating Junction and Storage Temperature Range: -55 to 150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information such as the electrical characteristics about the Si7748DP, please download the datasheet in www.seekic.com or www.chinaicmart.com.