Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· 100% Rg TestedApplication· DC/DC ConversionSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 C...
Si7804DN: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· 100% Rg TestedApplication· DC/DC ConversionSpecifications Parameter Symbol 1...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 10 | 6.5 | A |
| TA = 70 | 7.5 | 5.0 | |||
| Pulsed Drain Current | IDM | 40 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.9 | 1.2 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 1.5 | W |
| TA = 70 | 1.9 | 0.8 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||
| Soldering Recommendations (Peak Temperature)b,c | 260 | ||||