Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance· PowerPAK™ 1212-8 Package with Low 1.07-mm Profile· PWM OptimizedApplication· Primary Side Switch· In-Rush Current LimiterSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 100 ...
Si7810DN: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance· PowerPAK™ 1212-8 Package with Low 1.07-mm Profile· PWM OptimizedApplication· Primary Side Switch· In-Rush Current LimiterSp...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 100 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 5.4 | 3.4 | A |
| TA = 70 | 4.3 | 2.8 | |||
| Pulsed Drain Current | IDM | 30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 3.2 | 1.3 | ||
| Single Avalanche Current | L = 0.1 mH | IAS | 19 | ||
| Single Avalanche Energy (Duty Cycle1%) | EAS | 18 | mJ | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.8 | 1.5 | W |
| TA = 70 | 2.0 | 0.8 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||