Si7810DN

Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance· PowerPAK™ 1212-8 Package with Low 1.07-mm Profile· PWM OptimizedApplication· Primary Side Switch· In-Rush Current LimiterSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 100 ...

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SeekIC No. : 004490757 Detail

Si7810DN: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance· PowerPAK™ 1212-8 Package with Low 1.07-mm Profile· PWM OptimizedApplication· Primary Side Switch· In-Rush Current LimiterSp...

floor Price/Ceiling Price

Part Number:
Si7810DN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· New Low Thermal Resistance
· PowerPAK™ 1212-8 Package with Low
   1.07-mm Profile
· PWM Optimized



Application

· Primary Side Switch
· In-Rush Current Limiter



Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 5.4 3.4 A
TA = 70 4.3 2.8
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 3.2 1.3
Single Avalanche Current L = 0.1 mH IAS 19
Single Avalanche Energy (Duty Cycle1%) EAS 18 mJ
Maximum Power Dissipationa TA = 25 PD 3.8 1.5 W
TA = 70 2.0 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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