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Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 10 6.4 A TA = 70 8.0 5.1 Pulsed Drain Current IDM 20 Continuous Source Current (Diode Conduct...

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Si7844DP: Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 10 6.4 ...

Si7844DP Data Sheet

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Part Number:: Si7844DP
Supply Ability:: 5000

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Upload time: 2025/12/25

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Product Details

Description

Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		V_DS	30		V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J = 150)^a	T_A= 25	I_D	10	6.4	A
	T_A = 70		8.0	5.1
Pulsed Drain Current		I_DM	20
Continuous Source Current (Diode Conduction)^a		I_S	2.9	1.1
Maximum Power Dissipation^a	T_A = 25	P_D	3.5	1.4	W
	T_A= 70		2.2	0.9
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150

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Si7844DP

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