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Si7852DP

Features: · TrenchFET® Power MOSFETS· New Low Thermal Resistance PowerPAKMT Package with Low 1.07-mm Profile· PWM Optimized for Fast SwitchingApplication· Primary Side Switch for DC/DC ApplicationsSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS ...

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Si7852DP: Features: · TrenchFET® Power MOSFETS· New Low Thermal Resistance PowerPAKMT Package with Low 1.07-mm Profile· PWM Optimized for Fast SwitchingApplication· Primary Side Switch for DC/DC Applicati...

Si7852DP Data Sheet

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Part Number:
Si7852DP
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS
· New Low Thermal Resistance PowerPAKMT
    Package with Low 1.07-mm Profile
· PWM Optimized for Fast Switching


Application

· Primary Side Switch for DC/DC Applications


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 80 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 12.5 7.6 A
TA = 70 10.0 6.1
Pulsed Drain Current IDM 50
Avalanch Current L = 0.1 mH IAS 40
Continuous Source Current (Diode Conduction)a IS 4.7 1.7
Maximum Power Dissipationa TA = 25 PD 5.2 1.9 W
TA = 70 3.3 1.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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