Features: ` TrenchFET® Power MOSFET` Optimized for Low Side Synchronous Rectifier Operation` New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm ProfileSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage ...
Si7856DP: Features: ` TrenchFET® Power MOSFET` Optimized for Low Side Synchronous Rectifier Operation` New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm ProfileSpecifications Parame...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 25 | 14 | A |
| TA = 70 | 19 | 11 | |||
| Pulsed Drain Current | IDM | 60 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.5 | 1.6 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5.4 | 1.9 | W |
| TA = 70 | 3.4 | 1.2 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||
· DC/DC Converters
· Synchronous Rectifiers
Si7856DP