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Si7860DP

Features: · TrenchFET® Power MOSFET· PWM Optimized for High Efficiency· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· 100% Rg TestedApplication· Buck Converter - High Side or Low Side· Synchronous Rectifier -Secondary RectifierSpecifications Parameter Symbol ...

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SeekIC No. : 004490774 Detail

Si7860DP: Features: · TrenchFET® Power MOSFET· PWM Optimized for High Efficiency· New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile· 100% Rg TestedApplication· Buck Converter - Hig...

Si7860DP Data Sheet

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Part Number:
Si7860DP
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· PWM Optimized for High Efficiency
· New Low Thermal Resistance PowerPAK®
   Package with Low 1.07-mm Profile
· 100% Rg Tested


Application

· Buck Converter
    - High Side or Low Side
· Synchronous Rectifier
    - Secondary Rectifier


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 18 11 A
TA = 70 15 8
Pulsed Drain Current IDM ±30
Continuous Source Current (Diode Conduction)a IS 4.1 1.5
Single Avalanche Current L = 0.1 mH IAS 30
Single Avalanche Energy EAS 45 mJ
Maximum Power Dissipationa TA = 25 PD 5 1.8 W
TA = 70 3.2 1.1
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W



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