Features: · TrenchFET® Power MOSFET· Low rDS(on)· PWM (Qgd and RG) OptimizedApplication· Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops· Low Output Voltage Synchronous RectifierSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20...
Si7866DP: Features: · TrenchFET® Power MOSFET· Low rDS(on)· PWM (Qgd and RG) OptimizedApplication· Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops· Low Output Voltage Synchronous Rectifie...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 29 | 18 | A |
| TA = 70 | 25 | 14 | |||
| Pulsed Drain Current | IDM | 60 | |||
| Continuous Source Current (Diode Conduction)a | IS | 4.5 | 1.6 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5.4 | 1.9 | W |
| TA = 70 | 3.4 | 1.2 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||